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| 2SC4020 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4020 900 800 7 3(Pulse6) 1.5 50(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) 2SC4020 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 40typ V MHz pF 2.5 BCE 12.0min 4.0max sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=0.7A IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A VCE=12V, IE=-0.3A VCB=10V, f=1MHz External Dimensions MT-25(TO220) 3.00.2 10.20.2 4.80.2 2.00.1 Unit A A V 16.00.7 8.80.2 a b o3.750.2 V 1.35 0.65 +0.2 -0.1 2.5 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 357 IC (A) 0.7 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.1 IB2 (A) -0.35 ton (s) 1max tstg (s) 5max tf (s) 1max Weight : Approx 2.6g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 3 5 m 00 A 40 0m A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V ) 2 (IC/I B= 5) IC - V BE Temperature Characteristics (Typical) 3 (VCE=4V) 300m A Collector Current I C (A) 2 200 mA Collector Current I C (A) 2 140mA 100mA mp) e Te 1 V B E( sat) 25C (C I B =20mA V C E( sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 1 2 3 4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 125C DC C urrent G ain h FE 25C -30C 10 j- a( C/ W) hFE - IC Characteristics (Typical) ton*t s t g*t f ( s) 6 5 t on* tstg* t f - I C Characteristics (Typical) j-a - t Characteristics 5 VCC 250V IC:IB1:- IB2=2:0.3:1 Const. 1 tf 0.5 ton 0.2 0.1 0.5 1 3 Transient Thermal Resistance t s tg Switching Ti me 1 5 0.5 0.3 2 0.02 0.05 0.1 0.5 1 3 1 10 100 Time t(ms) -30C (C 1 60mA 1 125C (Cas mp) ase Tem p) ase Te 1000 2000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 10 10 Reverse Bias Safe Operating Area 50 P c - T a Derating Ma xim um Powe r Dissipat io n P C (W) 5 10 0 5 40 W ith Collecto r Cur rent I C( A) Collecto r Cur rent I C( A) s In fin 30 ite he 1 1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1% at si nk 0.5 Without Heatsink Natural Cooling 20 0.5 10 Without Heatsink 0 25 50 75 100 125 150 0.1 50 100 500 1000 0.1 50 100 500 1000 2 0 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 83 |
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